The diffusion of Sb in relaxed SiGe layers which had been prepared by means of molecular beam epitaxy, with x-values of between 0 (table 99) and 0.5, was studied as a function of composition. The diffusivity of Sb was found to increase with the Ge content, while the activation energy for diffusion decreased with increasing Ge content. However, the measured activation energies were significantly higher than the activation energies that were predicted by extrapolating between the activation energies for pure Si and pure Ge.

Diffusion of Sb in Relaxed Si1−xGex. A.N.Larsen, P.Kringhøj: Applied Physics Letters, 1996, 68[19], 2684-6