Self-diffusion measurements were extended to 800 to 900C by monitoring 30Si diffusion in isotopically enriched structures. By comparing Sb and Si diffusion (table 100, figure 14) under non-equilibrium conditions, it was deduced that the interstitial-mediated fraction of self-diffusion lay between 0.50 and 0.62 at 800 to 1100C. This permitted activation enthalpies of 4.68 and 4.86eV to be determined for the interstitial and vacancy mechanisms, respectively. These results differed from those found for metal diffusion experiments.

Self-Diffusion in Silicon - Similarity between the Properties of Native Point Defects A.Ural, P.B.Griffin, J.D.Plummer: Physical Review Letters, 1999, 83[17], 3454-7

Table 101

Grain Boundary Diffusion of Sb in Si