The migration of Sb was studied in intrinsic polycrystalline material and p-type bicrystals using radiotracer and etching techniques. It was found that the results were not greatly affected by heat treatment or by the presence of C. The results between 900 and 1100C could be described by:

Dd(cm3/s) = 2.2 x 10-13exp[-0.83(eV)/kT]

J.L.Liotard, R.Biberian, J.Cabane: Journal de Physique – Col1oque Cl, 1982, 43[10], 213-8

Table 103

Arrhenius Parameters for Sb Diffusion on (111) Si Surfaces