A source, in the form of the 46Sc-labelled chloride, was deposited onto Si plate samples to a depth of about 0.35mm. Diffusion annealing was then carried out in air (1100 to 1250C, 5 to 30h). The resultant Sc profile was determined by using etching and γ-ray counting. The diffusion coefficient was deduced by fitting the profile to the complementary error function. It was found that, with increasing temperature, the diffusivity of Sc increased from about 1.4 x 10-13 to about 1.9 x 10-12cm2/s. Overall, the results (table 104) could be described by the expression:

D(cm2/s) = 8 x 10-2exp[-3.2(eV)/kT]

G.K.Azimov, S.Zainabidinov, D.E.Nazyrov: Fizika i Tekhnika Poluprovodnikov, 1989, 23[3], 556-7 (Soviet Physics - Semiconductors, 1989, 23[3], 347)

Table 104

Diffusivity of Sc in Si