The concentration distribution of Se was determined from the sheet resistivity and sheet Hall coefficients as a function of temperature, combined with layer removal. The diffusion coefficient was estimated from the concentration of Se double donors, 0.26 and 0.50eV below the conduction band edge. Between 1000 and 1250C, the temperature dependence of the diffusion coefficient (table 105) was described by:
D(cm2/s) = 1.1 x 10-1exp[-2.42(eV)/kT]
Diffusion Coefficient of Selenium in Silicon by Sheet Hall Coefficient Measurements. C.H.Kim, M.Sakata: Japanese Journal of Applied Physics, 1979, 18[2], 247-54
Table 105
Diffusivity of Se as a Function of Temperature
Temperature (C) | D (cm2/s) |
1000 | 3.20 x 10-11 |
1050 | 6.05 x 10-11 |
1100 | 1.39 x 10-10 |
1150 | 3.35 x 10-10 |
1200 | 5.52 x 10-10 |
1250 | 1.04 x 10-9 |