Loop annealing was used to study self-diffusion over a wide range of dopant contents. It was found that the diffusion coefficient decreased as the content of n-type dopant decreased or the concentration of p-type dopant increased. At a given temperature, the diffusion coefficient depended linearly upon the electron concentration. This behavior was in agreement with the point defects responsible for self diffusion behaving as acceptors. For between 970 and l070C, the results could be described by:

D(cm2/s) = 5.8 x 100exp[-4.1(eV)/kT]

The self diffusion coefficient in intrinsic material agreed with those reported in the literature for higher temperatures. There appeared to be a slight curvature of the Arrhenius plot.

I.R.Sanders, P.S.Dobson: Journal of Materials Science, 1974, 9[12], 1987-93