The self-diffusion of implanted 31Si in relaxed Si0.20Ge0.80 layers was studied at 730 to 950C (figure 15) by using a modified radiotracer technique. The temperature dependences of the diffusion coefficients were found to be described by:

D (m2/s) = 7.5 x 10-3 exp[-3.6(eV)/kT]

These results suggested that, as in Ge, 31Si diffused in Si0.20Ge0.80 via a vacancy mechanism.

Self-Diffusion of 31Si and 71Ge in Relaxed Si0.20Ge0.80 Layers. P.Laitinen, A.Strohm, J.Huikari, A.Nieminen, T.Voss, C.Grodon, I.Riihimäki, M.Kummer, J.Äystö, P.Dendooven, J.Räisänen, W.Frank, Isolde: Physical Review Letters, 2002, 89[8], 085902 (4pp)

Figure 15

Diffusivity of Si in GeSi