It was pointed out that previously published radiotracer results for self diffusion in Si were limited to a relatively narrow temperature range and varied widely. In order to obtain more reliable data over a wide temperature range, the sputter sectioning technique was used. The specimens used were essentially dislocation-free and p-type. Gaussian penetration profiles were observed and the diffusion coefficients between 1320 and 1660K were obtained (table 107). They could be described by:

D(cm2/s) = 1.46 x 103exp[-5.02(eV)/kT]

The results supported the suggestion that self diffusion occurred via an extended interstitial mechanism.

H.J.Mayer, H.Mehrer, K.Maier: Institute of Physics Conference Series, 1976, 31, 186-93

Table 107

Self-Diffusion of Si