Diffusion in single-crystal intrinsic Si (impurity content: 1013atoms/cm3, dislocation density: 104/cm2) was investigated using a new method involving the stable isotope, 30Si, and the ion-analyzer technique. The temperature dependence of the diffusion coefficient between 885 and 1175C (table 108) could be described by:

D(cm2/s) = 1.54 x 102exp[-4.66(eV)/kT]

Self-Diffusion in Intrinsic Silicon. L.Kalinowski, R.Seguin: Applied Physics Letters, 1979, 35[3], 211-3

Table 108

Self-Diffusivity of Si