Self-diffusion in intrinsic material was studied using a resonance broadening method between 900 and 1100C. The material was a float-zone polished p-type (111)Si wafer. The results between 900 and 1100C could be described by:

D(cm2/s) = 8.0 x 100exp[-4.1(eV)/kT]

Self-Diffusion in Silicon as Probed by the ( p,γ) Resonance Broadening Method. J.Hirvonen, A.Anttila: Applied Physics Letters, 1979, 35[9], 703-5