Specimens were implanted with 30Si and the resultant profiles were determined by using nuclear reaction techniques. The results were used to estimate the diffusivity between 830 and 1200C. The data could be described by:

D(cm2/s) = 2 x 101exp[-4.4(eV)/kT]

and demonstrated unambiguously that the diffusion process at lower temperatures was described by parameters which were substantially smaller than those reported for higher temperatures.

F.J.Demond, S.Kalbitzer, H.Mannsperger, H.Damjantschitsch: Physics Letters A, 1983, 93[9], 503-6