A simple method for the estimation of the diffusivity of Si interstitials was described. At temperatures of between 460 and 500C, O thermal donors were used to monitor Si interstitials. The estimated diffusivity of Si interstitials at O-donor formation temperatures was fitted to published data on oxidation-enhanced and retarded diffusion experiments which had been performed at temperatures above 950C. At temperatures of between 460 and 1200C, the diffusivity of Si interstitials could be described by:

D(cm2/s) = 3.55 x 10-1exp[-1.86(eV)/kT]

W.Wijaranakula: Journal of Applied Physics, 1990, 67[12], 7624-7