The migration of Si adsorbates on a clean (001) surface was investigated by means of reflection electron microscopy. It was found that, when the sample was heated by using direct current, denuded zones with no observable Si islands were created at the terrace edges of the surface. The diffusivities, parallel and perpendicular to the surface dimer (table 111), were deduced from the denuded zone widths at temperatures ranging from 500 to 850C.

Diffusion Constants of Si Adsorbates on a Si(001) Surface. T.Doi, M.Ichikawa, S.Hosoki, K.Ninomiya: Japanese Journal of Applied Physics 1, 1996, 35[5A], 2770-3

 

Table 111

Diffusivity of Si on (001) Si Surfaces

 

Temperature (K)

Terrace

D (cm2/s)

773

1 x 2

4.7 x 10-13

823

1 x 2

1.8 x 10-12

873

1 x 2

6.1 x 10-12

923

2 x 1

3.2 x 10-12

923

1 x 2

1.7 x 10-11

973

2 x 1

7.6 x 10-12

1023

2 x 1

1.5 x 10-11

1023

1 x 2

8.6 x 10-11

1073

2 x 1

6.8 x 10-11

1073

1 x 2

3.6 x 10-10

1123

2 x 1

2.7 x 10-10