The diffusion of Sn from a Sn-doped oxide was studied by means of back-scattering and channelling techniques. It was found that the depth distribution of Sn could be fitted by a complementary error function. It was deduced that the diffusivity at between 1100 and 1200C could be described by:

D(cm2/s) = 5.4 x 10-2exp[-3.5(eV)/kT]

Using angular scan techniques, is was found that 90% of the Sn atoms occupied substitutional sites.

Study of Tin Diffusion into Silicon by Backscattering Analysis. Y.Akasaka: Japanese Journal of Applied Physics, 1974, 13[10], 1533