Commercial-quality Czochralski-type wafers of (111) orientation were diffusion annealed at between 900 and 1250C. The diffusion coefficient ranged from about 2 x 10-15 to 6 x 10-12cm2/s. Overall, the results could be described by:

D(cm2/s) = 5.0 x 10-1exp[-3.34(eV)/kT]

These values were several orders of magnitude lower than those for dopants such as S and Se. It was suggested that the diffusion mechanism was mainly substitutional in nature.

E.Janzen, H.G.Grimmeiss, A.Lodding, C.Deline: Journal of Applied Physics, 1982, 53[11], 7367-71