Serial sectioning techniques were used to investigate the diffusion of 44Ti in p-type material between 1000 and 1250C. It was found that the results could be described by:

D(cm2/s) = 2.0 x 10-5exp[-1.50(eV)/kT]

It was concluded that Si could be doped with Ti by diffusion annealing for about 100h at these temperatures.

V.P.Boldyrev, I.I.Pokrovskii, S.G.Romanovskaya, A.V.Tkach, I.E.Shimanovieh: Fizika i Tekhnika Poluprovodnikov, 1977, 11[6], 1199-201