It was found that the Tl diffusivity at between 1105 and 1360C could be described by:

D(cm2/s) = 1.65 x 101exp[-3.9(eV)/kT]

Diffusion of Donor and Acceptor Elements in Silicon. C.S.Fuller, J.A.Ditzenberger: Journal of Applied Physics, 1956, 27, 544