Monocrystalline wafer samples were annealed at temperatures ranging from 1070 to 1300C, and the resultant diffusion profiles were determined by using a 4-point sheet conductivity technique. It was found that the results (table 116) could be described by the expression:

D(cm2/s) = 1.5 x 101exp[-3.75(eV)/kT]

R.Sellmann, J.Mimkes: Physica Status Solidi A, 1989, 112[1], K5-7

Table 116

Diffusivity of Tl in Si

 

Temperature (C)

D (cm2/s)

1067

6.5 x 10-14

1087

1.8 x 10-13

1110

4.8 x 10-13

1132

8.0 x 10-13

1160

1.2 x 10-12

1182

1.8 x 10-12

1202

2.1 x 10-12

1220

2.4 x 10-12

1237

5.7 x 10-12

1252

8.6 x 10-12

1275

5.7 x 10-12

1277

7.4 x 10-12

1300

2.0 x 10-11