Monocrystalline samples were diffused with 48V (half-life = 16.1d) and annealed (1100 to 1250C, 5 to 25h). The results demonstrated that the diffusivity of V increased from 3.4 x 10-11 at 1100C to 4.4 x 10-10cm2/s at 1250C. Overall, the diffusivity obeyed the expression:

D(cm2/s) = 6.1 x 10-1exp[-2.8(eV)/kT]

G.K.Azimov, S.Z.Zainabidinov, J.I.Kozlov: Fizika i Tekhnika Poluprovodnikov, 1989, 23[10], 1890-1 (Soviet Physics - Semiconductors, 1989, 23[10], 1169-70)