The concentration profiles of V, at annealing temperatures of between 600 and 1200C (table 117), were measured by means of deep-level transient spectroscopy. On the basis of the data, it was found that the diffusivity could be described by:

D(cm2/s) = 9.0 x 10-3exp[-1.55(eV)/kT]

Diffusion of Vanadium in Silicon. T.Sadoh, H.Nakashima: Applied Physics Letters, 1991, 58[15], 1653-5

 

Table 117

Diffusivity of V in Si

 

Temperature (C)

D (cm2/s)

1200

4.7 x 10-8

1150

2.4 x 10-8

1100

2.1 x 10-8

1050

1.4 x 10-8

1000

6.2 x 10-9

950

3.4 x 10-9

800

4.7 x 10-10

700

8.0 x 10-11

600

1.1 x 10-11