The diffusion of yttrium in Si was studied for the first time. The diffusion was performed in air or vacuum at 1100 to 1250C. The temperature dependence of the diffusivity of yttrium in Si was described by:

D(cm2/s) = 8 x 10−3exp[−2.9(eV)/kT]

The acceptor nature of yttrium in Si was revealed.

Diffusion of Yttrium in Silicon. D.É.Nazyrov, M.I.Bazarbaev, A.A.Iminov: Semiconductors, 2006, 40[7], 768-9