The formation of Ni silicide alloyed with Pt was analyzed by atom probe tomography. A 300C/1 h anneal results in simultaneous growth of the NiSi and Ni2Si phases: the Ni2Si phase was a continuous layer with columnar grains, while the NiSi phase forms a discontinuous layer. Direct evidence of Pt diffusion short-circuits via Ni2Si grain boundaries was shown. The presence of Pt in the grains and interphase boundaries may explain the change in the Ni silicide formation for the Ni(5% Pt)/Si system.

Three-Dimensional Composition Mapping of NiSi Phase Distribution and Pt Diffusion via Grain Boundaries in Ni2Si. D.Mangelinck, K.Hoummada, A.Portavoce, C.Perrin, R.Daineche, M.Descoins, D.J.Larson, P.H.Clifton: Scripta Materialia, 2010, 62[8], 568-71