There were several diffusion processes with different temperatures in modern semiconductor technology. The impurity distribution after these diffusion processes was analyzed and a simple expression for describing the distribution was given. It was found that the impurity distribution after multiple diffusion processes could be characterized with an effective diffusion length. The relation between this effective diffusion length and the diffusion lengths of each diffusion process was given and showed itself to be very simple and instructive. The results of the expression agree well with numerical simulations by using SUPREM IV. An example of the application of the expression was also shown.

A Simple Expression for Impurity Distribution after Multiple Diffusion Processes. H.Hu, X.Chen: Journal of Semiconductors, 2010, 31[5], 052004