The behaviour of hydrogen in crystalline semiconductors has attracted considerable interest during several decades. Due to its high diffusion rate and ability to react with a wide variety of lattice imperfections such as intrinsic point defects, impurities, interfaces and surfaces, hydrogen was an impurity of fundamental importance in semiconductor materials. It was already evidenced in previous investigations that the most fundamental hydrogen-related defects in-group IV semiconductors were interstitial hydrogen atoms occupying the bond-centre site or the interstitial tetrahedral site. Using first-principles calculations Van de Walle predicted similar properties of isolated hydrogen in other II–VI and III–V semiconductors. Another interesting prediction shown in that work was the existence of a universal alignment for the hydrogen electronic (−/+) level. Until now there was no direct experimental information regarding the individual isolated hydrogen states in compound semiconductors and most reported properties were inferred indirectly. In the present work in-situ conventional deep-level transient spectroscopy and high-resolution Laplace deep-level transient spectroscopy techniques were used to analyse hydrogen-related levels after low-temperature proton implantation in various II–VI and III–V semiconductors including GaAs, ZnO and CdTe. From these experimental observations the donor level of isolated hydrogen was found to keep almost a constant value in the absolute energy scale taking into account different band-offsets calculated for the whole group of semiconductors.

Donor Level of Interstitial Hydrogen in Semiconductors: Deep Level Transient Spectroscopy. V.Kolkovsky, L.Dobaczewski, K.Bonde Nielsen, V.Kolkovsky, A.Nylandsted Larsen, J.Weber: Physica B, 2009, 404[23-24], 5080-4