A novel computational method was presented which involved combining the finite-element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appeared around the dislocation core. It was found that the dominant driving force of non-uniform composition was a strain contribution. Moreover, the method could be applied to dislocated nanoscale heterostructures which were inaccessible using atomistic treatments.

Dislocation-Induced Composition Profile in Alloy Semiconductors. H.Ye, P.F.Lu, Z.Y.Yu, D.L.Wang, Z.H.Chen, Y.M.Liu, S.M.Wang: Solid State Communications, 2010, 150[29-30], 1275-8