The interdiffusion of iso-electronic constituents across hetero-interfaces during the liquid-phase epitaxial growth of Hg1-xCdxTe on Cd1-yZnyTe and CdTe1-ySey substrates was measured, where x was equal to 0.2 or 0.5, and y was equal to 0, 0.04 or 0.07. This was done by means of energy-dispersive X-ray spectroscopy and secondary ion mass spectrometry. It was found that the interdiffusion coefficients of the constituent cation components (Cd, Hg) depended upon the x and y values, for growth temperatures ranging from 450 to 460C. Their asymmetrical concentration profiles exhibited steep slopes in the Cd-rich substrate and long tails in the Hg-rich layer. The concentration profiles of Zn and Se could be described by constant diffusion coefficients. The diffusivity of Cd could be described by the expressions:

yZn = ySe = 0: D (cm2/s) = 2.1 x 10-11exp[-8.2x]

yZn = 0.046: D (cm2/s) = 8.0 x 10-12exp[-4.7x]

yZn = 0.067: D (cm2/s) = 2.0 x 10-12exp[-0.5x]

ySe = 0.041: D (cm2/s) = 3.0 x 10-11exp[-8.0x]

I.Utke, W.Frentrup, I.Hähnert, H.Kirmse, O.Müller, M.Schenk, M.Winkler: Journal of Crystal Growth, 1996, 162, 126-34