Distribution profiles were determined by using an optical transmission method which exploited a hole-density dependence of the infra-red absorption coefficient. Crystals of Hg1-xCdxTe, where x ranged from 0.21 to 0.25, were grown by vertical crystallization and were subjected to prolonged annealing in saturated Hg vapour at 280C. The data, for 50 to 300C, could be described by:

D (cm2/s) = 8.1 x 10-3 exp[-0.42(eV)/kT]

V.V.Bogoboyashchii, A.I.Elizarov, V.A.Petryakov, V.I.Stafeev, V.N.Severtsev: Fizika i Tekhnika Poluprovodnikov, 1987, 21[8], 1469-71

Table 2

Diffusivity of Cu in Hg0.7Cd0.3Te