The distribution profiles were determined by using an optical transmission method which exploited a hole-density dependence of the infra-red absorption coefficient. Crystals of CdxHg1-xTe, with x = 0.21 to 0.25, were grown by vertical crystallisation and subjected to lengthy annealing in Hg vapour at 280C. The results could be described by:

50-300C:     D (cm2/s) = 8.1 x 10-3 exp[-0.42(eV)/kT]

V.V.Bogoboyashchii, A.I.Elizarov, V.A.Petryakov, V.I.Stafeev, V.N.Severtsev: Soviet Physics - Semiconductors, 1987, 21[8], 893-4