The fabrication of HgxCd1-xTe was carried out by diffusing Hg vapour into CdTe slices. This resulted in slices with a maximum x-value of 0.004. Diffusion annealing at much lower temperatures gave x-values 0.10. Measurements of the diffusion of Hg into such slices, where x ranged from 0 to 0.03 (under saturated vapour pressure conditions), resulted in 2 component profiles; each profile giving 2 diffusivity values. The diffusivities were independent of x. The activation energy for the diffusion of Hg (figure 2) was also independent of x-values of 0 to 0.03, at temperatures of between 250 and 400C.

M.U.Ahmed, E.D.Jones, J.B.Mullin, N.M.Stewart: Journal of Materials Science - Materials in Electronics, 1997, 8[5], 333-6

Figure 2

Diffusivity of Hg in HgxCd1-xTe

Circles: x = 0.03, squares: x = 0.004