Radio-tracer diffusion data were presented for bulk and epitaxial Hg1-xCdxTe at temperatures ranging from 254 to 452C. This was believed to be the first report of metalorganic vapor phase epitaxially grown (Cd,Hg)Te. It was found that, for all of the growth conditions, and for compositions with x = 0.2, the bulk Hg diffusivity (figure 3) under saturated Hg partial pressures obeyed the equation:

D (cm2/s) = 0.003 exp[-1.2(eV)/kT).

The diffusivity exhibited a marked compositional dependence, but was insensitive to changes in substrate material or crystal orientation. Autoradiography revealed that Hg exploited the defect structure in order to diffuse rapidly from the surface.

N.A.Archer, H.D.Palfrey, A.F.W.Willoughby: Journal of Electronic Materials, 1993, 22[8], 967-71