The rapid thermal diffusion of In into Hg0.70Cd0.30 was investigated by monitoring In concentration profiles using secondary ion mass spectrometry. It was found that there were 2 diffusing components. One was an atomic diffusion component which could be fitted by a complementary error function, and the other was a fast diffusion component with an exponential dependence. The rapid thermal diffusion of In into Hg0.70Cd0.30, at between 100 and 200C, could be described by:

D (cm2/s) = 1.45 x 10-2 exp[-0.772(eV)/kT]

S.M.Park, J.M.Kim, H.C.Lee, C.K.Kim: Japanese Journal of Applied Physics, 1996, 35[2-12A], L1554-7