Serial sectioning was used to study the self-diffusion of 115mCd in undoped p-type monocrystalline material at 700 to 1000C. It was found that the results could be described by:

D (cm2/s) = 1.26 x 100 exp[-2.07(eV)/kT]

No dependence of the diffusivity upon Cd vapour pressure was observed.

Cadmium Diffusion in CdTe. R.C.Whelan, D.Shaw: International Conference on II-VI Semiconductors, Brown University, 1967, 451-61

Figure 7

Diffusivity of Bi in CdTe