High-temperature electrical conductivity measurements were used to study chemical diffusion in monocrystalline material at 550 to 800C. It was found that the results could be described by:

D (cm2/s) = 6 x 100 exp[-1.15(eV)/kT]

and were almost independent of the Cd partial pressure, for over 2 decades from the Cd-rich liquidus. The data favoured an interstitial mechanism for Cd self-diffusion.

Chemical Diffusion in CdTe. K.Zanio: Journal of Applied Physics, 1970, 41[5], 1935-40