Diffusion profiles were determined by using heavy-ion (40MeV O5+) back-scattering methods. These indicated that the concentration of Hg atoms at the surface reached 4 x 1020/cm3, and that the distribution could be explained in terms of a simple diffusion model. It was shown that the data could be described by:

D (cm2/s) = 5 x 103 exp[-2.0(eV)/kT]

K.Takita, K.Murakami, H.Otake, K.Masuda, S.Seki, H.Kudo: Applied Physics Letters, 1984, 44[10], 996-8

 

Table 6

Arrhenius Parameters for Hg Diffusion in CdTe

 

Do (cm2/s)

E(eV)

Component

3.4 x 10-11

0.60

below 275C

3.5 x 10-4

1.46

above 275C

1.0 x 10-11

0.36

below 275C

3.4 x 10-7

0.97

above 275C

 

Figure 13

Diffusivity of Na in p-type CdTe

hole concentration = 1011 to 8 x 1011/cm3