The migration of Mn was measured at temperatures of between 500 and 800C, under conditions of Cd or Te saturation (tables 7 and 8). The variation in Mn diffusivity as a function of the Cd partial pressure was measured at 600C. At temperatures of between 500 and 800C, the Mn diffusivity was described by:

D (cm2/s) = 22.5 exp[-2.35(eV)/kT]

in the case of Te saturation. At temperatures of between 600 and 800C, under Cd saturation, the results could be described by:

D (cm2/s) = 1120 exp[-2.76(eV)/kT]

The data were consistent with those at 600C, which showed that the Mn diffusivity increased with decreasing Cd partial pressure. It was suggested that the behavior of the diffusivity was best explained in terms of a VCd” diffusion mechanism.

N.Y.Jamil, D.Shaw: Semiconductor Science and Technology, 1995, 10[7], 952-8

Table 8

Diffusivity of Mn in CdTe at 600C

as a Function of Cd Overpressure