The lateral self-diffusion of Se in polycrystalline thin films was studied by using a radioactive tracer scanning technique at temperatures ranging from 200 to 400C. It was found that the results could be described by:

D (cm2/s) = 5.53 x 10-4 exp[-0.26(eV)/kT]

The activation energy was attributed to Se diffusion via grain boundaries. The grain boundary energy was also estimated and was found to decease with increasing temperature.

A.P.Kumar, K.V.Reddy: Thin Solid Films, 1997, 304[1-2], 365-70