Liquid-phase epitaxial layers of Ga1-xAlxAs with various Al contents were studied by using a diffusion source which contained GaS and As in the mass ratio of 2:1. The diffusion of S was carried out in a sealed quartz ampoule at 820C, and in ambient As at a vapour pressure of 1atm. The value of x ranged from 0 to 0.3 (table 11). The diffusion data for GaAs and Ga0.7Al0.3As could be described by:
D (cm2/s) = 1.6 x 109 exp[-4.7(eV)/kT]
and
D (cm2/s) = 1.9 exp[-2.5(eV)/kT]
respectively. Smooth S diffusion was observed, which did not cause any surface damage.
Sulfur Diffusion into Ga1-xAlxAs with Various Al Contents H.Nishi, Y.Horikoshi, H.Ito: Journal of Applied Physics, 1998, 84[10], 5811-3
x | D (cm2/s) |
0 | 3.5 x 10-13 |
0.08 | 2.0 x 10-12 |
0.2 | 3.5 x 10-12 |
0.3 | 5.5 x 10-12 |