Studies were made of self-diffusion and interdiffusion in buried Al71GaAs/ Al69GaAs/71GaAs and AlAs/71GaAs isotope heterostructures at 800 to 1160C. The Al-Ga interdiffusion at AlGaAs/GaAs and AlAs/GaAs interfaces revealed a concentration-dependent interdiffusion coefficient. The temperature dependence of Al diffusion was described by:

D (cm2/s) = 1.7 x 10-1 exp[-3.50(eV)/kT]

H.Bracht, E.E.Haller, K.Eberl, M.Cardona: Applied Physics Letters, 1999, 74[1], 49-51