Measurements of the diffusion coefficient under various As-vapour pressures revealed that As self-diffusion was dominated by As self-interstitials. Annealing experiments performed on variously doped samples gave no indication of a Fermi-level effect, and it was concluded that As self-diffusion was governed mainly by neutral defects. The results for As self-diffusion at 900 to 1100C could be described by:

D (cm2/s) = 7.5 x 101 exp[-4.4(eV)/kT]

Phosphorus and Antimony in GaAs as Tracers for Self-Diffusion on the Arsenic Sublattice. R.F.Scholz, U.Gösele: Journal of Applied Physics, 2000, 87[2], 704-10

Figure 16

Diffusivity of N in GaAs