Recombination-enhanced impurity diffusion was observed for the first time in Be-doped GaAs. It was found that Be diffusion under forward bias was enhanced by a factor of about 1015 at room temperature, and that the activation energy for diffusion decreased from 1.8eV for thermal diffusion:

D(cm2/s) = 8.3 x 10-7 exp[-1.8(eV)/kT]

to 0.6eV under recombination-enhanced conditions:

D(cm2/s) = 8.7 x 10-11 exp[-0.59(eV)/kT]

M.Uematsu, K.Wada: Applied Physics Letters, 1991, 58[18], 2015-7