A study was made of recombination-enhanced impurity diffusion in Be-doped material. An investigation of tunnel diodes revealed that Be diffusion under forward bias was enhanced by a factor of about 1015 at room temperature, and that the activation energy for diffusion was reduced from 1.8eV for thermal diffusion to 0.6eV for recombination-enhanced impurity diffusion. In the latter process for Be, the energy which was related to minority carrier injection at the recombination centre encouraged the annihilation of the recombination centre, where a point defect which enhanced the Be diffusion was generated.

M.Uematsu, K.Wada: Materials Science Forum, 1992, 83-87, 1551-6