The diffusion of Be into GaAs, during the liquid-phase epitaxial growth of p-type Al0.8Ga0.2As, could be described by:

D (cm2/s) = 1.12 x 101 exp[-2.43(eV)/kT]

K.Masu, M.Konagai, K.Takahashi: Applied Physics Letters, 1980, 37[2], 182-4