The diffusion of Cr was studied under equilibrium As-vapour pressures. The temperature dependences of Cr diffusivity and solubility in GaAs were determined. These dependences could be described by:

D (cm2/s) = 3.1 x 105 exp[-3.2(eV)/kT]

and

S (/cm3) = 2.1 x 1021 exp[-1.0(eV)/kT]

The experimental results obtained were compared with previously published data on the diffusion of Cr under high As-vapour pressures and were analyzed in terms of the dissociative mechanism of migration of Cr in GaAs.

Diffusion of Chromium in GaAs under Equilibrium Arsenic-Vapor Pressure. S.S.Khludkov, O.B.Koretskaya, G.R.Burnashova: Semiconductors, 2006, 40[9], 999-1001