A study was made of Cr diffusion from a surface layer produced by thermal evaporation into n-type GaAs in a flowing inert-reducing atmosphere. The temperature dependences of the Cr diffusivity and solubility in GaAs were well represented by:

D (cm2/s) = 1.7 x 10-2 exp[-1.43(eV)/kT]

and by:

S (/cm3) = 8.9 x 1021 exp[-1.22(eV)/kT]

respectively.

Chromium Diffusion in GaAs in an Open System. M.V.Ardyshev, I.A.Prudaev, O.P.Tolbanov, S.S.Khludkov: Inorganic Materials, 2008, 44[9], 918-20