Diffusion was studied by measuring the thickness of high-resistivity layers which formed during Cr diffusion into n-type material. The dependence of the diffusivity upon temperature, As vapour-pressure, conductivity type and carrier density was determined. The temperature dependence of the diffusivity could be described by:

D (cm2/s) = 8 x 109 exp[-4.9(eV)/kT]

The dependence of the diffusivity upon As-vapour pressure was described by: D  PAs4-m, where m was equal to about 0.4. The data were interpreted in terms of the dissociative mechanism for Cr migration in GaAs.

Chromium Diffusion in Gallium Arsenide. S.S.Khludkov, O.B.Koretskaya, A.V.Tyazhev: Semiconductors, 2004, 38[3], 262-5