The Fe was diffused from a spun-on glass film, and onto n-type wafers, at temperatures of between 700 and 900C (table 14). The diffusivities, as determined by using junction-depth and conductivity techniques, could be explained in terms of a model which assumed the existence of exhaustible diffusion sources. It was found that the diffusivity was described by:

D(cm2/s) = 1000 exp[-2.7(eV)/kT]

within the above temperature range.

J.Ohsawa, H.Kakinoki, H.Ikeda, M.Migitaka: Journal of the Electrochemical Society, 1990, 137[8], 2608-11

Table 14

Diffusivity of Fe in GaAs