The effect of triply negatively charged Ga vacancies (VGa3-) and doubly positively charged Ga self-interstitials (IGa2+) upon the self-diffusivity of Ga was studied. Under thermal equilibrium and intrinsic conditions, the contribution of VGa3- was characterized by an activation enthalpy of 6eV in As-rich crystals and of 7.52eV in Ga-rich crystals. The contribution of IGa2+ was characterized by an activation enthalpy of 4.89eV in the case of As-rich crystals, and of 3.37eV in the case of Ga-rich crystals.

T.Y.Tan, S.Yu, U.Gösele: Journal of Applied Physics, 1991, 70[9], 4823-6