Studies were made of self-diffusion and interdiffusion in buried Al71GaAs/ Al69GaAs/71GaAs and AlAs/71GaAs isotope heterostructures at 800 to 1160C. It was found that Ga diffusion at Al71GaAs/Al69GaAs interfaces decreased with increasing Al content. The Al-Ga interdiffusion at AlGaAs/GaAs and AlAs/GaAs interfaces revealed a concentration-dependent interdiffusion coefficient. The temperature dependence of Ga diffusion was described by:

D (cm2/s) = 6.4 x 10-1 exp[-3.71(eV)/kT]

H.Bracht, E.E.Haller, K.Eberl, M.Cardona: Applied Physics Letters, 1999, 74[1], 49-51