The diffusion of Cd into single crystals was investigated at 756 to 1201C. It was possible to deduce effective Cd diffusivities and Ga diffusivities from the Cd profiles; as mediated by doubly positively charged Ga self-interstitials. The diffusivity of doubly positively charged Ga self-interstitials could be described by:

D (cm2/s) = 3.5 x 104 exp[-5.74(eV)/kT]

Overall, the results strongly suggested that, in heavily p-doped GaAs, atomic transport on the Ga sub-lattice was governed by self-interstitials rather than by vacancies.

G.Bösker, N.A.Stolwijk, H.Mehrer, U.Södervall, W.Jäger: Journal of Applied Physics, 1999, 86[2], 791-9