GaAs: Ga Surface Diffusion during molecular beam epitaxial growth. Results for Ga diffusion during the growth of GaAs films with (001) 2 x 4 and 3 x 1 reconstructed surfaces were presented. It was found that the results could be described by:

D (cm2/s) = 8.5 x 10-6 exp[-1.3(eV)/kT]

A more quantitative evaluation could be made by systematically varying the orientation, and thus the terrace width.

J.H.Neave, P.J.Dobson, B.A.Joyce, J.Zhang: Applied Physics Letters, 1985, 47[2], 100-2